SEMICONDUCTOR DEVICE ASSEMBLY

Solicitation number W8482-132840/A

Publication date

Closing date and time 2012/07/19 14:00 EDT


    Description
    Trade Agreement: Agreement on Internal Trade (AIT)
    Tendering Procedures: All interested suppliers may submit a bid
    Attachment: None
    Competitive Procurement Strategy: Lowest/Lower Bid
    Comprehensive Land Claim Agreement: No
    Nature of Requirements: 
    SEMICONDUCTOR DEVICE ASSEMBLY
    
    W8482-132840/A
    Godbout, Lyne
    Telephone No. - (819) 956-3611 (    )
    Fax No. - (  -)    -    
    
    ITEM 1: NSN: 5961-01-3567805 SEMICONDUCTOR DEVICE ASSEMBLY, C/O
    MATCHED PAIR OF 04713/MRF148MP;RF POWER MOSFET; FREQ RANGE 2 TO
    175 MHZ;120.0 MAX DRAIN/SOURCE VOLTAGE 6.0 AMP MAX DRAIN
    CURRENT;150 DEG C MAX OP TEMP;115.0 WATT TOTAL DEVICE DISS.;4
    RIBBON TERM.;MAX O/A DIM. 0.810 IN. LG, 0.990 IN. W, 0.281 IN. H.
    
    P/N: MRF148MP
    NSCM: 04713
    Freescale Semiconductor Inc, AZ, US
    
    QUANTITY: 200 PR
    
    Or equivalent
    
    ITEM 2: NSN: 5961-01-3567805 SEMICONDUCTOR DEVICE ASSEMBLY, C/O
    MATCHED PAIR OF 04713/MRF148MP;RF POWER MOSFET; FREQ RANGE 2 TO
    175 MHZ;120.0 MAX DRAIN/SOURCE VOLTAGE 6.0 AMP MAX DRAIN
    CURRENT;150 DEG C MAX OP TEMP;115.0 WATT TOTAL DEVICE DISS.;4
    RIBBON TERM.;MAX O/A DIM. 0.810 IN. LG, 0.990 IN. W, 0.281 IN. H.
    
    P/N: MRF148MP
    NSCM: 04713
    Freescale Semiconductor Inc, AZ, US
    
    QUANTITY: 200 PR
    
    Or equivalent
    
    ITEM 3: NSN: 5961-01-3567809, SEMICONDUCTOR DEVICE SET,
    COMPONENT NAME AND QUANTITY:2 SEMICONDUCTOR DEVICE DIODE;SPECIAL
    FEATURES:SPECIFIED 50 VOLTS, 30 MHZ CHARACTERISTICS, OUTPUT
    POWER = 150 WATTS, POWER GAIN = 17 DB (TYP), EFFICIENCY = 45%
    (TYP) AND SUPERIOR HIGH ORDER IMD; 150 W, TO 150 MHZ N-CHANNEL
    MOS LINEAR RF POWER FET;
    
    P/N: MRF150MP
    NSCM: 50998
    M/A-COM Technology Solutions Inc, CA, US
    
    QUANTITY: 500 each
    
    Or equivalent
    
    ITEM 4: NSN: 5961-01-3567809, SEMICONDUCTOR DEVICE SET,
    COMPONENT NAME AND QUANTITY:2 SEMICONDUCTOR DEVICE DIODE;SPECIAL
    FEATURES:SPECIFIED 50 VOLTS, 30 MHZ CHARACTERISTICS, OUTPUT
    POWER = 150 WATTS, POWER GAIN = 17 DB (TYP), EFFICIENCY = 45%
    (TYP) AND SUPERIOR HIGH ORDER IMD; 150 W, TO 150 MHZ N-CHANNEL
    MOS LINEAR RF POWER FET;
    
    P/N: MRF150MP
    NSCM: 50998
    M/A-COM Technology Solutions Inc, CA, US
    
    QUANTITY: 500 each
    
    Or equivalent
    
    ITEMS ARE TO BE SHIPPED TO VICTORIA, BC AND HALIFAX, NS
    
    DELIVERY: August 31, 2012.
    
    Delivery Date: Above-mentioned
    
    The Crown retains the right to negotiate with suppliers on any
    procurement.
    
    Documents may be submitted in either official language of Canada.

    Contract duration

    Refer to the description above for full details.

    Trade agreements

    • Agreement on Internal Trade (AIT)

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    Contact information

    Contracting organization

    Organization
    Public Works and Government Services Canada
    Address
    11 Laurier St, Phase III, Place du Portage
    Gatineau, Quebec, K1A 0S5
    Canada
    Contracting authority
    Godbout, Lyne
    Phone
    (819) 956-3611 ( )
    Fax
    () -
    Address
    11 Laurier St./11, rue Laurier
    6B1, Place du Portage, Phase III
    Gatineau, Québec, K1A 0S5

    Buying organization(s)

    Organization
    Department of National Defence
    Address
    101 Colonel By Dr
    Ottawa, Ontario, K1A0K2
    Canada
    Bidding details

    Full details regarding this tender opportunity are available in the documents below. Click on the document name to download the file. Contact the contracting officer if you have any questions regarding these documents.

    Tender documents
    Document title Amendment no. Language Unique downloads Date added
    000
    English
    0
    000
    French
    0

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    Summary information

    Notice type
    Request for Proposal
    Language(s)
    English, French
    Region(s) of delivery
    British Columbia
    ,
    Nova Scotia

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